PART |
Description |
Maker |
EM42BM3284LBA-8FE EM421M3284LBA-75FE EM421M3284LBA |
512Mb (4M×4Bank×32) Double DATA RATE SDRAM 512Mb (4M?4Bank?32) Double DATA RATE SDRAM 512Mb (4M】4Bank】32) Double DATA RATE SDRAM
|
http:// List of Unclassifed Manufacturers ETC[ETC] Eorex Corporation
|
EM42AM1684LBA-75FE EM42AM1684LBA-7FE EM42AM1684LBA |
512Mb (8M×4Bank×16) Double DATA RATE SDRAM
|
Eorex Corporation http://
|
HYB39S5121600AT-8 HYB39S5121600AT-7 HYB39S5121600A |
512Mb (32M x 16) PC100 2-2-2 Available Q402 512Mb (32M x 16) PC133 2-2-2 Available Q402 512Mb (32M x 16) PC133 3-3-3 Available Q402 128M X 4 SYNCHRONOUS DRAM, 5 ns, PDSO54
|
INFINEON TECHNOLOGIES AG
|
NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb(x8/x16.8/3V28字节页)NAND闪存以及256/512Mb(x16/x32.8V的)LPSDRAM的MCP
|
意法半导 STMicroelectronics N.V.
|
3TB41-15 |
TB Series Basic Switch, Double Pole Double Throw Double Break Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, Silver Contacts, Screw Termination
|
Honeywell
|
ESMMC128 ESMMC512 ESMMC256 ESMMC64 |
64MB/128MB/256MB/512MB MultiMediaCard⑩ 64MB/128MB/256MB/512MB MultiMediaCard?/a> 64MB/128MB/256MB/512MB MultiMediaCard垄芒
|
Eorex Corporation
|
EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒 512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a> 128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
HYB25D512160AT-6 HYB25D512800AT-6 HYB25D512160AT-7 |
DDR SDRAM Components - 512Mb (32Mx16) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb (64Mx8) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb (32Mx16) DDR266A (2-3-3) DDR SDRAM Components - 512Mb (128Mx4) DDR266A (2-3-3) DDR SDRAM Components - 512Mb (64Mx8) DDR266A (2-3-3)
|
Infineon
|
HYS64D64020GDL-6-A HYS64D64020GDL-7-A HYS64D64020G |
512MB (64Mx64) PC2100 2-bank 12MB的(64Mx64)PC2100 2银行 512MB (64Mx64) PC1600 2-bank 12MB的(64Mx64)PC1600 2银行 DDR SDRAM Modules - 512MB (64Mx64) PC2100 2-bank DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank
|
Infineon Technologies AG Unisonic Technologies Co., Ltd.
|
HYS64V6422 HYS64V64220GBDL-75-D HYS64V64220GBDL-8- |
512MB PC133 (2-2-2) 2-bank. FBGA based. available 3Q02 12MB的PC133的(2-2-2银行FBGA封装为基础?可Q02 144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块 SDRAM Modules - 512MB PC133 (2-2-2) 2-bank, FBGA based; End-of-Life
|
INFINEON[Infineon Technologies AG]
|
1300940219 |
Standard Duty Support Grip, Double Eye, Closed Mesh, Double Weave
|
Molex Electronics Ltd.
|